Infineon BSS84PH6327

Infineon · FETs & Power MOSFETs · MPN BSS84PH6327

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Specifications

Gate Charge(Qg)1.5nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)8pF
Current - Continuous Drain(Id)170mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation360mW
Reverse Transfer Capacitance (Crss@Vds)3pF
RDS(on)12Ω@4.5V
Number1 P-Channel
Input Capacitance(Ciss)19pF
TypeP-Channel

Technical details

P-Channel 60V 0.17A 0.36W Surface Mount SOT-23

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