Infineon BSS816NWH6327

Infineon · FETs & Power MOSFETs · MPN BSS816NWH6327

No reviews yet — be the first to review Infineon BSS816NWH6327.

Specifications

Drain to Source Voltage20V
Gate Charge(Qg)600pC@2.5V
Output Capacitance(Coss)67pF
Current - Continuous Drain(Id)1.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))750mV
Pd - Power Dissipation500mW
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)240mΩ@1.8V
Number1 N-channel
Input Capacitance(Ciss)180pF
TypeN-Channel

Technical details

N-Channel 20V 1.4A 0.5W Surface Mount SOT-323

Related FETs & Power MOSFETs