Infineon · FETs & Power MOSFETs · MPN BSS806NEH6327
No reviews yet — be the first to review Infineon BSS806NEH6327.
| Gate Charge(Qg) | 1.7nC@2.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 2.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 750mV |
| Pd - Power Dissipation | 500mW |
| Reverse Transfer Capacitance (Crss@Vds) | 29pF |
| RDS(on) | 57mΩ@2.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 529pF |
N-Channel 20V 2.3A 0.5W Surface Mount SOT-23