Infineon · FETs & Power MOSFETs · MPN BSS7728N H6327
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| Gate Charge(Qg) | 1.5nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 200mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.3V |
| Pd - Power Dissipation | 360mW |
| Reverse Transfer Capacitance (Crss@Vds) | 4.4pF |
| RDS(on) | 2.7Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 56pF |
60V 200mA 1.3V 360mW 2.7Ω@10V 1 N-channel SOT-23-3 Single FETs, MOSFETs RoHS