Infineon · FETs & Power MOSFETs · MPN BSS670S2L H6327
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| Gate Charge(Qg) | 2.26nC@10V |
|---|---|
| Drain to Source Voltage | 55V |
| Current - Continuous Drain(Id) | 540mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 360mW |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF |
| RDS(on) | 825mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 75pF |
| Type | N-Channel |
N-Channel 55V 0.54A 0.36W Surface Mount SOT-23