Infineon · Transistors (BJTs) · MPN BSS64E6327
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 100MHz |
| Collector - Emitter Voltage VCEO | 80V |
| Emitter-Base Voltage VEBO | 5V |
| DC Current Gain | 20 |
| Pd - Power Dissipation | 330mW |
| type | NPN |
| Current - Collector(Ic) | 800mA |
| Vce Saturation(VCE(sat)) | 3V |
80V 20 NPN 800mA SOT-23 Single Bipolar Transistors RoHS