Infineon BSS606NH6327

Infineon · FETs & Power MOSFETs · MPN BSS606NH6327

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Specifications

Gate Charge(Qg)5.6nC@5V
Drain to Source Voltage60V
Output Capacitance(Coss)174pF
Current - Continuous Drain(Id)3.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.3V
Pd - Power Dissipation1W
Reverse Transfer Capacitance (Crss@Vds)15.3pF
RDS(on)90mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)657pF
TypeN-Channel

Technical details

N-Channel 60V 3.2A 1W Surface Mount SOT-89

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