Infineon BSS314PEH6327XTSA1

Infineon · FETs & Power MOSFETs · MPN BSS314PEH6327XTSA1

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)2.9nC@10V
Current - Continuous Drain(Id)1.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation500mW
Reverse Transfer Capacitance (Crss@Vds)11pF
RDS(on)230mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)294pF

Technical details

P-Channel 30V 1.5A 0.5W Surface Mount SOT-23

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