Infineon BSS314PEH6327

Infineon · FETs & Power MOSFETs · MPN BSS314PEH6327

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Specifications

Gate Charge(Qg)2.9nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)-
Current - Continuous Drain(Id)1.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation500mW
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)230mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)-
TypeP-Channel

Technical details

P-Channel 30V 1.5A 0.5W Surface Mount SOT-23

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