Infineon BSS306NH6327

Infineon · FETs & Power MOSFETs · MPN BSS306NH6327

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Specifications

Gate Charge(Qg)650pC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)2.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation500mW
Reverse Transfer Capacitance (Crss@Vds)17pF
RDS(on)57mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)275pF

Technical details

N-Channel 30V 2.3A 0.5W Surface Mount SOT-23

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