Infineon BSS225H6327FTSA1

Infineon · FETs & Power MOSFETs · MPN BSS225H6327FTSA1

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Specifications

Configuration-
Drain to Source Voltage600V
Gate Charge(Qg)5.8nC@10V
Current - Continuous Drain(Id)90mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.3V
Pd - Power Dissipation1W
Reverse Transfer Capacitance (Crss@Vds)4.4pF
RDS(on)45Ω@4.5V
Number1 N-channel
Input Capacitance(Ciss)131pF

Technical details

N-Channel 600V 90mA 1W Surface Mount SOT-89

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