Infineon BSS223PWL6327

Infineon · FETs & Power MOSFETs · MPN BSS223PWL6327

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Specifications

Gate Charge(Qg)620pC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)26pF
Current - Continuous Drain(Id)390mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation250mW
Reverse Transfer Capacitance (Crss@Vds)22pF
RDS(on)2.1Ω@4.5V
Number1 P-Channel
Input Capacitance(Ciss)56pF
TypeP-Channel

Technical details

20V 390mA 1.2V 250mW 2.1Ω@4.5V 1 P-Channel P-Channel SOT-323-3 Single FETs, MOSFETs RoHS

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