Infineon · FETs & Power MOSFETs · MPN BSS209PWH6327
No reviews yet — be the first to review Infineon BSS209PWH6327.
| Gate Charge(Qg) | 1.3nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | - |
| Current - Continuous Drain(Id) | 630mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 300mW |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 900mΩ@2.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 115pF |
| Type | P-Channel |
P-Channel 20V 0.63A 0.3W Surface Mount SOT-323