Infineon · FETs & Power MOSFETs · MPN BSS169L6327
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| Gate Charge(Qg) | 2.8nC |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 13pF |
| Current - Continuous Drain(Id) | 170mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 360mW |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF |
| RDS(on) | 12Ω@0V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 68pF |
| Type | N-Channel |
100V 170mA 1.8V 360mW 12Ω@0V 1 N-channel N-Channel SOT-23-3 Single FETs, MOSFETs RoHS