Infineon · FETs & Power MOSFETs · MPN BSS169IXTSA1
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| Gate Charge(Qg) | 2.1nC |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 9pF |
| Current - Continuous Drain(Id) | 190mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 360mW |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF |
| RDS(on) | 12Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 51pF |
| Type | N-Channel |
100V 190mA 1.8V 360mW 12Ω@10V 1 N-channel N-Channel SOT-23 Single FETs, MOSFETs RoHS