Infineon BSS159N H6327

Infineon · FETs & Power MOSFETs · MPN BSS159N H6327

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Specifications

Drain to Source Voltage60V
Current - Continuous Drain(Id)230mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation360mW
Reverse Transfer Capacitance (Crss@Vds)5pF
RDS(on)8Ω@10V
Number1 N-channel
Input Capacitance(Ciss)39pF

Technical details

N-Channel 60V 0.23A 0.36W Surface Mount SOT-23-3

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