Infineon BSS139IXTSA1

Infineon · FETs & Power MOSFETs · MPN BSS139IXTSA1

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Specifications

Drain to Source Voltage250V
Gate Charge(Qg)2.3nC
Output Capacitance(Coss)6.7pF
Current - Continuous Drain(Id)100mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation360mW
Reverse Transfer Capacitance (Crss@Vds)2.6pF
RDS(on)30Ω@0V
Number1 N-channel
Input Capacitance(Ciss)60pF
TypeN-Channel

Technical details

250V 100mA 1V 360mW 30Ω@0V 1 N-channel N-Channel SOT-23 Single FETs, MOSFETs RoHS

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