Infineon BSS139H6327

Infineon · FETs & Power MOSFETs · MPN BSS139H6327

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Specifications

Drain to Source Voltage250V
Gate Charge(Qg)3.5nC
Output Capacitance(Coss)8.4pF
Current - Continuous Drain(Id)100mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.1V
Pd - Power Dissipation360mW
Reverse Transfer Capacitance (Crss@Vds)3.3pF
RDS(on)30Ω@0V
Number1 N-channel
Input Capacitance(Ciss)76pF
TypeN-Channel

Technical details

N-Channel 250V 0.1A 0.36W Surface Mount SOT-23

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