Infineon BSS138NH6327

Infineon · FETs & Power MOSFETs · MPN BSS138NH6327

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Specifications

Gate Charge(Qg)1nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)7.2pF
Current - Continuous Drain(Id)230mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.4V
Pd - Power Dissipation360mW
Reverse Transfer Capacitance (Crss@Vds)2.8pF
RDS(on)3.5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)32pF
TypeN-Channel

Technical details

N-Channel 60V 230mA 360mW Surface Mount SOT-23

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