Infineon BSS131 H6327

Infineon · FETs & Power MOSFETs · MPN BSS131 H6327

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Specifications

Drain to Source Voltage240V
Gate Charge(Qg)3.1nC@10V
Output Capacitance(Coss)10pF
Current - Continuous Drain(Id)110mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation360mW
Reverse Transfer Capacitance (Crss@Vds)4.2pF
RDS(on)14Ω@10V
Input Capacitance(Ciss)77pF
TypeN-Channel

Technical details

N-Channel 240V 0.11A 0.36W Surface Mount PG-SOT-23

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