Infineon BSS126H6327

Infineon · FETs & Power MOSFETs · MPN BSS126H6327

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Specifications

Gate Charge(Qg)2.1nC@5V
Drain to Source Voltage600V
Current - Continuous Drain(Id)21mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation500mW
Reverse Transfer Capacitance (Crss@Vds)1.5pF
RDS(on)700Ω@10V
Number1 N-channel
Input Capacitance(Ciss)28pF

Technical details

N-Channel 600V 21mA 0.5W Surface Mount SOT-23-3

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