Infineon BSS123NH6433XTMA1

Infineon · FETs & Power MOSFETs · MPN BSS123NH6433XTMA1

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Specifications

Gate Charge(Qg)900pC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)4.5pF
Current - Continuous Drain(Id)190mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation500mW
Reverse Transfer Capacitance (Crss@Vds)3.1pF
RDS(on)10Ω@4.5V
Number1 N-channel
Input Capacitance(Ciss)20.9pF
TypeN-Channel

Technical details

N-Channel 100V 0.19A 0.5W Surface Mount SOT-23

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