Infineon · FETs & Power MOSFETs · MPN BSS123NH6327
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| Gate Charge(Qg) | 900pC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 190mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 500mW |
| Reverse Transfer Capacitance (Crss@Vds) | 3.1pF |
| RDS(on) | 6Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 20.9pF |
N-Channel 100V 0.19A 0.5W Surface Mount TO-236-3