Infineon · FETs & Power MOSFETs · MPN BSS123IXTSA1
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 630pC@10V |
| Current - Continuous Drain(Id) | 190mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 500mW |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 6Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 15pF |
N-Channel 100V 190mA 500mW Surface Mount SOT-23