Infineon BSS123IXTSA1

Infineon · FETs & Power MOSFETs · MPN BSS123IXTSA1

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)630pC@10V
Current - Continuous Drain(Id)190mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation500mW
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)6Ω@10V
Number1 N-channel
Input Capacitance(Ciss)15pF

Technical details

N-Channel 100V 190mA 500mW Surface Mount SOT-23

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