Infineon · FETs & Power MOSFETs · MPN BSS119N H7796
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 600pC@10V |
| Output Capacitance(Coss) | 4.5pF |
| Current - Continuous Drain(Id) | 190mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Pd - Power Dissipation | 500mW |
| Reverse Transfer Capacitance (Crss@Vds) | 3.1pF |
| RDS(on) | 6Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 20.9pF |
| Type | N-Channel |
100V 190mA 2.3V 500mW 6Ω@10V 1 N-channel N-Channel SOT-23-3 Single FETs, MOSFETs RoHS