Infineon BSR92P H6327

Infineon · FETs & Power MOSFETs · MPN BSR92P H6327

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Specifications

Gate Charge(Qg)4.8nC@10V
Drain to Source Voltage250V
Output Capacitance(Coss)16pF
Current - Continuous Drain(Id)140mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation500mW
Reverse Transfer Capacitance (Crss@Vds)8pF
RDS(on)20Ω@2.8V
Number1 P-Channel
Input Capacitance(Ciss)109pF
TypeP-Channel

Technical details

P-Channel 250V 0.14A 0.5W SC59

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