Infineon · FETs & Power MOSFETs · MPN BSR316P H6327
No reviews yet — be the first to review Infineon BSR316P H6327.
| Gate Charge(Qg) | 7nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 360mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 500mW |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF |
| RDS(on) | 1.8Ω@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 165pF |
P-Channel 100V 0.36A 0.5W Surface Mount SC-59-3