Infineon BSR315P H6327

Infineon · FETs & Power MOSFETs · MPN BSR315P H6327

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Specifications

Gate Charge(Qg)6nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)620mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation500mW
Reverse Transfer Capacitance (Crss@Vds)30pF
RDS(on)1.3Ω@10V
Number1 P-Channel
Input Capacitance(Ciss)176pF

Technical details

P-Channel 60V 0.62A 0.5W Surface Mount SC-59-3

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