Infineon BSP92P H6327

Infineon · FETs & Power MOSFETs · MPN BSP92P H6327

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Specifications

Gate Charge(Qg)4.3nC@10V
Drain to Source Voltage250V
Output Capacitance(Coss)13pF
Current - Continuous Drain(Id)260mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation1.8W
Reverse Transfer Capacitance (Crss@Vds)6pF
RDS(on)7.5Ω@10V
Number1 P-Channel
Input Capacitance(Ciss)83pF
TypeP-Channel

Technical details

250V 260mA 1.5V 1.8W 7.5Ω@10V 1 P-Channel P-Channel SOT-223-4 Single FETs, MOSFETs RoHS

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