Infineon · FETs & Power MOSFETs · MPN BSP89 H6327
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| Gate Charge(Qg) | 4.3nC@10V |
|---|---|
| Drain to Source Voltage | 240V |
| Output Capacitance(Coss) | 11.2pF |
| Current - Continuous Drain(Id) | 350mA |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Pd - Power Dissipation | 1.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 5.2pF |
| RDS(on) | 4.2Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 80pF |
| Type | N-Channel |
240V 350mA 1.4V 1.8W 4.2Ω@10V 1 N-channel N-Channel SOT-223 Single FETs, MOSFETs RoHS