Infineon BSP88H6327

Infineon · FETs & Power MOSFETs · MPN BSP88H6327

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Specifications

Gate Charge(Qg)6.8nC@10V
Drain to Source Voltage240V
Current - Continuous Drain(Id)350mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.4V
Pd - Power Dissipation1.8W
Reverse Transfer Capacitance (Crss@Vds)9pF
RDS(on)4Ω@10V
Number1 N-channel
Input Capacitance(Ciss)95pF

Technical details

N-Channel 240V 0.35A 1.8W Surface Mount SOT-223-4

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