Infineon · FETs & Power MOSFETs · MPN BSP716NH6327
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| Gate Charge(Qg) | 13.1nC@10V |
|---|---|
| Drain to Source Voltage | 75V |
| Current - Continuous Drain(Id) | 2.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 1.8W |
| RDS(on) | 160mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 29pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 315pF |
N-Channel Array 75V 2.3A 1.8W Surface Mount SOT-223