Infineon · FETs & Power MOSFETs · MPN BSP613PH6327
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| Gate Charge(Qg) | 22nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 230pF |
| Current - Continuous Drain(Id) | 2.9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 1.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 90pF |
| RDS(on) | 110mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 715pF |
| Type | P-Channel |
60V 2.9A 3V 1.8W 110mΩ@10V 1 P-Channel P-Channel SOT-223 Single FETs, MOSFETs RoHS