Infineon · FETs & Power MOSFETs · MPN BSP603S2LNT
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| Drain to Source Voltage | 55V |
|---|---|
| Gate Charge(Qg) | 42nC@10V |
| Current - Continuous Drain(Id) | 5.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 1.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF |
| RDS(on) | 40mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.39nF |
| Type | N-Channel |
55V 5.2A 2V 1.8W 40mΩ@4.5V 1 N-channel N-Channel SOT-223-4 Single FETs, MOSFETs RoHS