Infineon BSP50E6327

Infineon · Transistors (BJTs) · MPN BSP50E6327

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Specifications

Current - Collector Cutoff10uA
Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO45V
DC Current Gain2000
Pd - Power Dissipation1.5W
typeNPN
Current - Collector(Ic)1A
Vce Saturation(VCE(sat))1.8V
Operating Temperature-

Technical details

45V 2000 NPN 1A SOT-223-4 Single Bipolar Transistors RoHS

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