Infineon · FETs & Power MOSFETs · MPN BSP373E6327
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| Drain to Source Voltage | 100V |
|---|---|
| Output Capacitance(Coss) | 190pF |
| Current - Continuous Drain(Id) | 1.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 1.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 105pF |
| RDS(on) | 300mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 550pF |
| Type | N-Channel |
100V 1.7A 4V 1.8W 300mΩ@10V 1 N-channel N-Channel SOT-223-4 Single FETs, MOSFETs