Infineon BSP324L6327

Infineon · FETs & Power MOSFETs · MPN BSP324L6327

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Specifications

Gate Charge(Qg)5.9nC@10V
Drain to Source Voltage400V
Output Capacitance(Coss)13.6pF
Current - Continuous Drain(Id)170mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.3V
Pd - Power Dissipation1.8W
Reverse Transfer Capacitance (Crss@Vds)5.7pF
RDS(on)25Ω@10V
Number1 N-channel
Input Capacitance(Ciss)154pF
TypeN-Channel

Technical details

400V 170mA 2.3V 1.8W 25Ω@10V 1 N-channel N-Channel SOT-223-4 Single FETs, MOSFETs RoHS

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