Infineon · FETs & Power MOSFETs · MPN BSP324 H6327
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| Gate Charge(Qg) | 5.9nC@10V |
|---|---|
| Drain to Source Voltage | 400V |
| Current - Continuous Drain(Id) | 170mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.3V |
| Pd - Power Dissipation | 1.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 5.7pF |
| RDS(on) | 13.6Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 154pF |
400V 170mA 1.3V 1.8W 13.6Ω@10V 1 N-channel SOT-223-4 Single FETs, MOSFETs RoHS