Infineon BSP322PL6327

Infineon · FETs & Power MOSFETs · MPN BSP322PL6327

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)16.5nC@10V
Output Capacitance(Coss)94pF
Current - Continuous Drain(Id)1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.8W
Reverse Transfer Capacitance (Crss@Vds)51pF
RDS(on)1Ω@4.5V
Number1 P-Channel
Input Capacitance(Ciss)372pF
TypeP-Channel

Technical details

100V 1A 1V 1.8W 1Ω@4.5V 1 P-Channel P-Channel SOT-223-4 Single FETs, MOSFETs RoHS

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