Infineon · FETs & Power MOSFETs · MPN BSP322PL6327
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 16.5nC@10V |
| Output Capacitance(Coss) | 94pF |
| Current - Continuous Drain(Id) | 1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 1.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 51pF |
| RDS(on) | 1Ω@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 372pF |
| Type | P-Channel |
100V 1A 1V 1.8W 1Ω@4.5V 1 P-Channel P-Channel SOT-223-4 Single FETs, MOSFETs RoHS