Infineon · FETs & Power MOSFETs · MPN BSP321P H6327
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| Gate Charge(Qg) | 12nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 980mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Pd - Power Dissipation | 1.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 42pF |
| RDS(on) | 900mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 319pF |
P-Channel 100V 0.98A 1.8W Surface Mount SOT-223