Infineon BSP317PL6327

Infineon · FETs & Power MOSFETs · MPN BSP317PL6327

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Specifications

Drain to Source Voltage250V
Gate Charge(Qg)15.1nC@10V
Output Capacitance(Coss)37pF
Current - Continuous Drain(Id)430mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation1.8W
Reverse Transfer Capacitance (Crss@Vds)16.7pF
RDS(on)5Ω@4.5V
Number1 P-Channel
Input Capacitance(Ciss)262pF
TypeP-Channel

Technical details

250V 430mA 2V 1.8W 5Ω@4.5V 1 P-Channel P-Channel SOT-223-4 Single FETs, MOSFETs RoHS

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