Infineon · FETs & Power MOSFETs · MPN BSP317P H6327
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| Gate Charge(Qg) | 15.1nC@10V |
|---|---|
| Drain to Source Voltage | 250V |
| Current - Continuous Drain(Id) | 430mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 1.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 16.7pF |
| RDS(on) | - |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 262pF |
P-Channel 250V 0.43A 1.8W Surface Mount SOT-223