Infineon BSP316PL6327

Infineon · FETs & Power MOSFETs · MPN BSP316PL6327

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Specifications

Gate Charge(Qg)6.4nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)34.5pF
Current - Continuous Drain(Id)680mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation1.8W
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)1.8Ω@10V
Input Capacitance(Ciss)146pF
TypeP-Channel

Technical details

100V 680mA 2V 1.8W 1.8Ω@10V P-Channel SOT-223-4 Single FETs, MOSFETs RoHS

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