Infineon · FETs & Power MOSFETs · MPN BSP316PL6327
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| Gate Charge(Qg) | 6.4nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 34.5pF |
| Current - Continuous Drain(Id) | 680mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 1.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF |
| RDS(on) | 1.8Ω@10V |
| Input Capacitance(Ciss) | 146pF |
| Type | P-Channel |
100V 680mA 2V 1.8W 1.8Ω@10V P-Channel SOT-223-4 Single FETs, MOSFETs RoHS