Infineon BSP315PH6327

Infineon · FETs & Power MOSFETs · MPN BSP315PH6327

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Specifications

Gate Charge(Qg)7.8nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)50pF
Current - Continuous Drain(Id)1.17A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation1.8W
Reverse Transfer Capacitance (Crss@Vds)21pF
RDS(on)1.4Ω@4.5V
Number1 P-Channel
Input Capacitance(Ciss)160pF
TypeP-Channel

Technical details

P-Channel 60V 1.17A 1.8W Surface Mount SOT-223

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