Infineon · FETs & Power MOSFETs · MPN BSP297L6327
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| Gate Charge(Qg) | 16.1nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Output Capacitance(Coss) | 47pF |
| Current - Continuous Drain(Id) | 660mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 1.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 23.5pF |
| RDS(on) | 1.8Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 357pF |
| Type | N-Channel |
200V 660mA 1.8V 1.8W 1.8Ω@10V 1 N-channel N-Channel SOT-223-4 Single FETs, MOSFETs RoHS