Infineon BSP296NH6327

Infineon · FETs & Power MOSFETs · MPN BSP296NH6327

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)6.7nC@10V
Output Capacitance(Coss)26.3pF
Current - Continuous Drain(Id)1.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation1.8W
Reverse Transfer Capacitance (Crss@Vds)14.7pF
RDS(on)800mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)152.7pF
TypeN-Channel

Technical details

N-Channel 100V 1.2A 1.8W Surface Mount SOT-223

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