Infineon · FETs & Power MOSFETs · MPN BSP295H6327XTSA1
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 17nC@10V |
| Current - Continuous Drain(Id) | 1.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 1.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 67pF |
| RDS(on) | 300mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 368pF |
N-Channel 60V 1.8A 1.8W Surface Mount SOT-223-4