Infineon BSP170IATMA1

Infineon · FETs & Power MOSFETs · MPN BSP170IATMA1

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)10.8nC@30V
Output Capacitance(Coss)62pF
Current - Continuous Drain(Id)3.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation5W
Reverse Transfer Capacitance (Crss@Vds)18pF
RDS(on)188.7mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)420pF
TypeP-Channel

Technical details

60V 3.2A 3V 5W 188.7mΩ@10V 1 P-Channel P-Channel SOT-223 Single FETs, MOSFETs RoHS

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