Infineon · FETs & Power MOSFETs · MPN BSP149H6327
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| Gate Charge(Qg) | 11nC |
|---|---|
| Drain to Source Voltage | 200V |
| Output Capacitance(Coss) | 41pF |
| Current - Continuous Drain(Id) | 660mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Pd - Power Dissipation | 1.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF |
| RDS(on) | 1.8Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 326pF |
| Type | N-Channel |
N-Channel 200V 660mA 1.8W Surface Mount SOT-223