Infineon · FETs & Power MOSFETs · MPN BSP149 H6906
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| Gate Charge(Qg) | 14nC@5V |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 660mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 1.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| RDS(on) | 3.5Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 430pF |
200V 660mA 1.8W 3.5Ω@10V 1 N-channel SOT-223-4 Single FETs, MOSFETs RoHS